Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability

Toshiba developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern to realize both low on-resistance and high reliability. Toshiba has confirmed that the design secures an approximately 20% reduction in on-resistance (RonA - the resistance value between the drain and source of a MOSFET during operation) against its current SiC MOSFET, with no loss of reliability.

For those readers following the fascinating article series by Morty Tarr on "Cascodes, Folded Cascodes, and Current Mirrors," this final article in the series contains an additional section with important aspects of amplifier design. In the first two parts of this article series, Tarr discussed the technical merits of cascodes and related circuits. This useful addendum covers a simple test circuit for matching FET devices, the fascinating story of the Blowtorch Line Stage design, and additional notes on inverting and non-inverting amplifier stages and integrators. This article was originally published in audioXpress, December 2021.

In Part 1 of this three-part article about circuit topologies that are used to provide specific functions for an amplifier design, the author discussed cascodes and folded cascodes. In this Part 2, he focuses on current mirrors and line stages. As the author writes, “As designers, we have many devices to choose from. Some devices are ideally suited to certain tasks. Other tasks require performance that is difficult to achieve. While many excellent devices exist today, ideal devices do not exist, except maybe in Spice simulations.” This article was originally published in audioXpress, October 2021.

For this audio electronics article, Morty Tarr wrote a fascinating exploration of circuit topologies that are used to provide specific functions for an amplifier design. Cascodes, folded cascodes, and current mirrors are some of these topologies, intended to improve the performance of the devices, but which also add complications. In the first of a three-part series, the author discusses cascodes and folded cascodes, useful to improve high-frequency response and device linearity.

This article from Dimitri Danyuk explores ways to provide better isolation between input and output terminals and lower input noise current using JFETs from Linear Integrated Systems. For unity-gain buffer applications there are many open-loop IC buffers on the market based on bipolar technology. They are mostly complementary emitter followers connected in series. With the appearance of complementary JFETs from Linear Integrated Systems, it is possible to construct a discrete buffer with JFET input. This article was originally published in audioXpress, March 2019.

This article continues the classic JFETs series of articles by Erno Borbely and introduces one of his starter kits with an all-JFET line amp. Originally published in audioXpress March 2005 this is an essential reading to understand the “building blocks” of the “Borbely amplifiers”.

The basic circuits on which Erno Borbely based most of his projects are described in “JFETs: The New Frontiers, Part I and II,” published in Audio Electronics AE 5/99 and 6/99, and “All-FET Line Amp,” published in audioXpress May 2002. As the author admits, these were the “building blocks” on which many - if not all - of his amplifiers are based. This articles continues his JFETs series and was originally published in Audio Electronics, Vol 5 1999.

The basic circuits on which Erno Borbely based most of his projects are described in “JFETs: The New Frontiers, Part I and II,” published in Audio Electronics AE 5/99 and 6/99. Referring to these articles frequently, the author admits, these were the “building blocks” on which many - if not all - of his amplifiers are based. This article is the first part, as originally published in Audio Electronics, Vol. 5 1999.