Infineon Technologies announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable Gallium Nitride (GaN) to be used in voltage classes from 40V to 700V in a broader array of applications that help drive digitalization and decarbonization. These two product families, now expanded with the portfolio that resulted from the GaN Systems acquisition, are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria).
Infineon's GaN power technology includes CoolGaN GIT HEMT technology. HEMT, which stands for high electron mobility transistor, is formed by bringing two structurally dissimilar substrates together to form a heterojunction transistor to promote higher electron mobility and allowing stable switching during GaN HEMT operation. In October 2023, GaN Systems became part of Infineon. The Ottawa-based company added a broad portfolio of gallium nitride (GaN)-based power conversion solutions and leading-edge application know-how, reinforcing Infineon's leadership in power systems in all relevant power technologies.
With these two new generations, Infineon expands its CoolGaN advantages and capacity to ensure a robust supply chain in the GaN devices market, which is estimated to grow with an average annual growth rate (CAGR) of 46 percent over the next five years according to Yole Group.
"This announcement builds nicely on our acquisition of GaN Systems last year and brings to market a whole new level of efficiency and performance for our customers," says Adam White, Division President of Power & Sensor Systems at Infineon. "The new generations of our Infineon CoolGaN family in high and medium voltage demonstrate our product advantages and are manufactured entirely on 8 inch, demonstrating the fast scalability of GaN to larger wafer diameters. I am excited to see all of the disruptive applications our customers unleash with these new generations of GaN."
The new 650V G5 family addresses applications in consumer, data center, industrial and solar. These products are the next generation of GIT-based high voltage products from Infineon. The second new family manufactured on the 8-inch process is the medium voltage G3 devices which include CoolGaN Transistor voltage classes 60V, 80V, 100V and 120V; and 40V bidirectional switch (BDS) devices. The medium voltage G3 products are targeted at motor drive, telecom, data center, solar and consumer applications.
The CoolGaN 650V G5 family will be available in Q4 2024 and the medium voltage CoolGaN G3 will be available in Q3 2024. Samples are available now.
www.infineon.com
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Infineon Announces Next Generation CoolGaN Transistor Families
May 31 2024, 00:35
Infineon Technologies announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable Gallium Nitride (GaN) to be used in voltage classes from 40V to 700V in a broader array of applications that help drive digitalization and decarbonization. These two product families, now expanded with the portfolio that resulted from the GaN Systems acquisition, are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria).
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