Infineon OptiMOS Power MOSFETs with Highest Power Density and Efficiency

Available in space-saving SuperSO8 packages, Infineon's OptiMOS 3 and 5 best-in-class (BiC) power MOSFETs enable higher power density in addition to improved robustness compared to former models. With the new components, system costs are reduced while the overall performance is increased. The OptiMOS power MOSFET devices from Infineon are designed for synchronous rectification in power supply applications and are the ideal choice for other applications such as low voltage drives and Class D amplifiers.
 
Thanks to the lowest on-state resistance (RDS(on)) the BiC MOSFETs enable reduced losses at a good price-performance ratio. Furthermore, low thermal impedance between Junction to Case (RthJC) provides excellent thermal behavior, which promotes a lower full load temperature. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the needs for snubber circuits. As a result engineering costs and effort are reduced.
 
The 175° rating of the BiC MOSFETs facilitates designs with either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. In addition, with the increases in the temperature rating, 20 percent improvement in the safe operating area (SAO) is achieved.
 
With their performance data the BiC MOSFETs are ideal for applications such as power supplies, three-phase inverter, low voltage drives as well as for class D audio applications. The Infineon OptiMOS BiC power MOSFET portfolio includes versions from 60V to 250V.
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