Infineon Announces Next Generation CoolGaN Transistor Families

Infineon Technologies announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN devices which now enable Gallium Nitride (GaN) to be used in voltage classes from 40V to 700V in a broader array of applications that help drive digitalization and decarbonization. These two product families, now expanded with the portfolio that resulted from the GaN Systems acquisition, are manufactured on high performance 8-inch in-house foundry processes in Kulim (Malaysia) and Villach (Austria).

Infineon Technologies broadened its CoolGaN series with two new devices: the CoolGaN 400 V and the CoolGaN 600 V. Gallium nitride (GaN) offers fundamental advantages over silicon, with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs. The new CoolGaN 400 V device will appeal to audio product designers looking for a premium solution for home or professional Class D amplifiers.